Electronics (E&C) Engineering Test 1
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Questions
Instruction:
- Total number of questions : 20
- Time allotted : 25 minutes.
- Each question carry 1 mark, no negative marks.
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Total number of questions | : | 19 |
Number of currect answered | : | 0 |
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- Answered
- Review
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Question 1 of 19
1. Question
1 points.
Two resistors of resistance 10 ohms and 20 ohms are connected in parallel,the effective resistance of the combination is _______ ohms.
CorrectAnswer : C
IncorrectAnswer : C
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Question 2 of 19
2. Question
1 pointsCorrectAnswer : D
IncorrectAnswer : D
-
Question 3 of 19
3. Question
1 pointsCorrectAnswer : B
IncorrectAnswer : B
-
Question 4 of 19
4. Question
1 pointsCorrectAnswer : B
IncorrectAnswer : B
-
Question 5 of 19
5. Question
1 pointsCorrectAnswer : D
IncorrectAnswer : D
-
Question 6 of 19
6. Question
1 pointsCorrectAnswer : C
IncorrectAnswer : C
-
Question 7 of 19
7. Question
1 pointsCorrectAnswer : C
IncorrectAnswer : C
-
Question 8 of 19
8. Question
1 pointsCorrectAnswer : D
IncorrectAnswer : D
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Question 9 of 19
9. Question
1 pointsCorrectAnswer : A
IncorrectAnswer : A
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Question 10 of 19
10. Question
1 points.
With a JFET , a ratio of output current change against an input voltage change is called
CorrectAnswer : A
IncorrectAnswer : A
-
Question 11 of 19
11. Question
1 pointsCorrectAnswer : C
IncorrectAnswer : C
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Question 12 of 19
12. Question
1 pointsCorrectAnswer : B
IncorrectAnswer : B
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Question 13 of 19
13. Question
1 pointsCorrectAnswer : A
IncorrectAnswer : A
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Question 14 of 19
14. Question
1 pointsCorrectAnswer : A
IncorrectAnswer : A
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Question 15 of 19
15. Question
1 pointsCorrectAnswer : D
IncorrectAnswer : D
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Question 16 of 19
16. Question
1 points.
Consider a hypothetical number system with a radix of 3 and its three independent digits as 0,2 and 4 ,the number that would come immediately after 444 is
CorrectAnswer : A
IncorrectAnswer : A
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Question 17 of 19
17. Question
1 pointsCorrectAnswer : D
IncorrectAnswer : D
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Question 18 of 19
18. Question
1 points.
The memory device has both high-density ,high speed access and in-circuit electrical erase ability feature is
CorrectAnswer : D
IncorrectAnswer : D
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Question 19 of 19
19. Question
1 points.
The theoretical dividing line between Reduced Instruction Set Computing (RISC) chips and Complex Instruction Set Computing (CISC) chips is
CorrectAnswer : C
IncorrectAnswer : C